Search results for "Hole Mobility"

showing 4 items of 4 documents

Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet

2008

Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold filling. Peer Reviewed

Electron mobilityMaterials scienceOrganic compounds.Analytical chemistryDipolar broadeningGeneral Physics and AstronomySpin coatingHole mobilityElectronic density of statesConductivityOxidacióCompostos orgànicsElectrical resistivity and conductivity:FÍSICA [UNESCO]Molecular clustersOrganic compoundsOxidationDopingElectrical conductivityOxidation.Molecular nanomagnetMolecular magnetic clusterMolecular magnetism Nanostructured materialsSpin coatingDopingUNESCO::FÍSICAElectric conductivity.Thin film transistorsNanostructured materialsConductivitat elèctricaNanomagnet:Enginyeria electrònica::Microelectrònica [Àrees temàtiques de la UPC]Doping ; Electrical conductivity ; Electronic density of states ; Hole mobility ; Molecular clusters ; Molecular magnetism Nanostructured materials ; Organic compounds ; Oxidation ; Spin coating ; Thin film transistorsDensity of statesNanostructured materials.Hole transport layerMaterials nanoestructuratsOrder of magnitude
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Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination

2006

The impedance model for a one-carrier space-charge-limited (SCL) current has been applied to explain some experimental features of double carrier organic light-emitting diodes. We report the analytical model of impedance of bipolar drift transport in SCL regime in the limit of infinite recombination. In this limit the ac impedance function is identical to that of a single carrier device, with a transit time modified by the sum of mobilities for electrons and holes, μn+μp. The static capacitance C(ω→0) is a factor of ¾ lower than the geometric capacitance, as observed for single carrier devices, but it is shifted to higher frequencies. It follows that impedance measurements in the dual-carri…

Electron mobilityElectric impedanceOrganic light emitting diodes ; Space charge ; Space-charge-limited conduction ; Electron-hole recombination ; Electric impedance ; Electron mobility ; Hole mobility ; CapacitanceCapacitanceGeneral Physics and AstronomyHole mobilityElectronOrganic light emitting diodesCapacitanceSpace charge:FÍSICA [UNESCO]OLEDElectrical impedanceDiodePhysicsElectron mobilitySpace-charge-limited conductionbusiness.industryUNESCO::FÍSICASpace chargeElectron-hole recombinationPhysics::Accelerator PhysicsOptoelectronicsAtomic physicsbusinessRecombinationJournal of Applied Physics
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Tin-related double acceptors in gallium selenide single crystals

1998

Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…

Electron mobilityHole MobilityAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementMineralogyDeep LevelsCondensed Matter::Materials Sciencechemistry.chemical_compound:FÍSICA [UNESCO]Condensed Matter::SuperconductivitySelenideNuclear ExperimentConduction BandsGallium Compounds ; III-VI Semiconductors ; Tin ; Impurity States ; Deep Levels ; Electrical Resistivity ; Hall Effect ; Hole Mobility ; Conduction BandsImpurity StatesElectrical ResistivityHall EffectIII-VI SemiconductorsPhonon scatteringCarrier scatteringDopingUNESCO::FÍSICAAcceptorchemistryTinGallium CompoundsTinIndiumJournal of Applied Physics
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Transport properties of nitrogen doped p‐gallium selenide single crystals

1996

Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in orde…

Electron mobilityOptical PhononsPhotoluminescenceMaterials scienceNitrogen AdditionsPhononExcitonGallium SelenidesHole MobilityGeneral Physics and AstronomyMonocrystalsCondensed Matter::Materials ScienceP−Type Conductors:FÍSICA [UNESCO]Condensed Matter::SuperconductivityDoped MaterialsHall EffectCondensed matter physicsPhonon scatteringScatteringDopingTemperature DependenceUNESCO::FÍSICAAcceptorDoped Materials ; Excitons ; Gallium Selenides ; Hall Effect ; Hole Mobility ; Monocrystals ; Nitrogen Additions ; Optical Phonons ; P−Type Conductors ; Temperature Dependence ; Transport ProcessesTransport ProcessesExcitons
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